Subpicosecond photoconductivity ofAs: Intervalley scattering rates observed via THz spectroscopy
- 15 August 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (8) , 5568-5573
- https://doi.org/10.1103/physrevb.54.5568
Abstract
We report on the transient photoconductivity of hot carriers in undoped bulklike As observed via time-resolved terahertz far-infrared spectroscopy. For very dilute photoexcitation densities of <1× and an initial excess carrier energy of 630 meV, we find that electrons have an effective intervalley L→Γ return time of 3.1 ps as measured via the increased electrical conductivity associated with Γ electrons. In contrast, a total conductivity risetime of ∼0.5 ps is observed for electrons with initial excess energy insufficient to cause intervalley scattering. The observed frequency dependent conductivity is analyzed via the Drude theory, allowing the determination of the temporal dynamics of the mobility at dilute excitation densities of ∼1× . © 1996 The American Physical Society.
Keywords
This publication has 16 references indexed in Scilit:
- Identifying the Distinct Phases of Carrier Transport in Semiconductors with 10 fs ResolutionPhysical Review Letters, 1995
- Terahertz spectroscopy of optically thick multilayered semiconductor structuresJournal of the Optical Society of America B, 1994
- Rate equations for the study of femtosecond intervalley scattering in compound semiconductorsPhysical Review B, 1992
- Far-infrared light generation at semiconductor surfaces and its spectroscopic applicationsIEEE Journal of Quantum Electronics, 1992
- Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injectionApplied Physics Letters, 1991
- Initial thermalization of photoexcited carriers in GaAs studied by femtosecond luminescence spectroscopyPhysical Review Letters, 1991
- Cooling of hot carriers in three- and two-dimensionalAsPhysical Review B, 1989
- Hot-Electron Recombination at Neutral Acceptors in GaAs: A cw Probe of Femtosecond Intervalley ScatteringPhysical Review Letters, 1989
- Semiconductor PhysicsPublished by Springer Nature ,1989
- Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopyPhysical Review Letters, 1987