Impact excitation of phosphorus in silicon at low temperatures
- 28 December 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (24) , L699-L703
- https://doi.org/10.1088/0022-3719/10/24/005
Abstract
Conduction electrons moving in moderate electric fields are used to promote electrons successively into the higher excited states of the phosphorus donor in silicon at low temperatures. The method of delayed breakdown is used: (i) to measure the threshold electric field at which a state may be excited and thus to help identify the state; and (ii) to measure the lifetime of that state. In the temperature range 17-20K it was found that the lifetime of one of the upper 1s states (T1 or E) was of the order of hours, that of one of the 2s states was of the order of tenths of seconds, and that of the other 2s state was of the order of seconds.Keywords
This publication has 1 reference indexed in Scilit:
- Delayed avalanche breakdown and donor excited state lifetimesJournal of Physics C: Solid State Physics, 1977