InP epitaxy with a new metalorganic compound

13 March 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (6) , 228
https://doi.org/10.1049/el:19800163

Abstract

A new metal-organic compound, a trimethyl-indium trimethyl-phosphine adduct has been used for the growth of InP epitaxial layers. The formation of unwanted polymer products during epitaxial growth could be avoided in this way. Epitaxial layers of good quality (N_D − N_A≃10¹⁶−10¹⁷ cm⁻³ were grown at a rate of 0.8 μm/h.

Keywords

METALORGANIC COMPOUND
INP EPITAXY
CVD
ADVANTAGES
VPE
GROWTH RATE 0.8 MICRON/H
(CH3)3IN-P(CH3)3
TRIMETHYL INDIUM TRIMETHYL PHOSPHINE ADDUCT

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