A 1Mb CMOS DRAM

• 1 January 1985
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• Vol. XXVIII, 256-257
• https://doi.org/10.1109/isscc.1985.1156770

Abstract

Keywords

• RANDOM ACCESS MEMORY
• CIRCUITS
• DECODING
• TIMING
• DIELECTRIC SUBSTRATES
• CAPACITANCE
• LATCHES
• BANDWIDTH
• CMOS PROCESS
• ALUMINUM