Structure of S-passivated InP(100)-(1×1) surface
- 1 June 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (22) , 2773-2775
- https://doi.org/10.1063/1.106872
Abstract
X-ray absorption near-edge structure (XANES) is used to determine the structure of the S-passivated InP(100)-(1×1) surface. From photon electric polarization-dependent XANES studies, we found that S forms a bridge bond with two In atoms along the [011] direction, with an In-S-In bond angle of 100°. The atomic position of S is found to be close to the tetrahedral site of a phosphorous vacancy.Keywords
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