Growth mechanism of GaAs by metalorganic vapor phase epitaxy
- 18 April 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (16) , 2105-2107
- https://doi.org/10.1063/1.111697
Abstract
We observed concentric ring patterns on metalorganic vapor phase epitaxy grown GaAs surface by atomic force microscopy. The growth mechanism for the concentric ring pattern is different from that of spiral growth due to screw dislocations. A more plausible growth mechanism for the concentric rings is the stacking fault mechanism. Stacking faults that emerge from the (100) growth surface create steps of 1/3 and 2/3 the elementary height. The 1/3 and 2/3 substeps act as persistent step sources for growth.Keywords
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