The growth by iodine vapour transport and the crystal structures of layer compounds in the series SnSxSe2−x(0⩽x⩽2), SnxZr1−xSe2 (0⩽x⩽1), and TaSxSe2−x (0⩽x⩽2)
- 1 May 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 38 (2) , 221-232
- https://doi.org/10.1016/0022-0248(77)90301-3
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Crystal data for layer compounds in the series HfSxSe2?xJournal of Materials Science, 1974
- The growth by iodine vapour transport techniques and the crystal structures of layer compounds in the series TiSxSe2−x, TiSxTe2−x, TiSexTe2−xJournal of Crystal Growth, 1974
- Structural polytypism of SnS2Nature, 1974
- Growth conditions and crystal structure parameters of layer compounds in the series ZrSxSe2–xPhysica Status Solidi (a), 1973
- Growth conditions and crystal structure parameters of layer compounds in the series SnxZr1−xS2Materials Research Bulletin, 1973
- Nearly perfect single crystals of layer compounds grown by iodine vapour-transport techniquesJournal of Crystal Growth, 1972
- Crystal Data for Layer Compounds in the Series SnSxSe2−xPhysica Status Solidi (a), 1971
- Vapour growth of new single-crystalline phases in the system Cu-Nb-SJournal of Crystal Growth, 1968
- Crystal growth by chemical transport reactions—IJournal of Physics and Chemistry of Solids, 1961
- The growth of single crystals of binary and ternary chalcogenides by chemical transport reactionsJournal of Physics and Chemistry of Solids, 1960