Spectral hole burning in the gain region of an inverted semiconductor
- 15 November 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (20) , 15472-15475
- https://doi.org/10.1103/physrevb.48.15472
Abstract
We report on the observation and numerical calculations of femtosecond gain dynamics in an optically excited, CdSe epitaxial sample at low temperature. Spectral hole burning is clearly observed around the pump as it is tuned through the gain region. The pump-probe experiments agree well with our theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrier–LO-phonon scattering.Keywords
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