From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor

Preprint

15 July 1998

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9807233

Abstract

We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. When an unpaired electron is localized within the transistor, the Kondo effect is observed. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a cross-over between the Kondo and mixed-valence regimes of the Anderson model.

Keywords

ELECTRON TRANSISTOR
SINGLE ELECTRON
VALENCE REGIMES
ANDERSON MODEL
MIXED VALENCE
KONDO REGIME
TRANSISTOR
UNPAIRED

All Related Versions

Version 1, 1998-07-15, ArXiv
Published version: Physical Review Letters, 81 (23), 5225.