Improvement of Post-Chemical Mechanical Planarization Characteristics on Organic Low k Methylsilsesquioxane as Intermetal Dielectric

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Abstract
This work has investigated the electrical and material characteristics of post‐chemical mechanical planarization (CMP) methylsilsesquioxane (MSQ). Experimental results have shown that the dielectric properties of low k MSQ deteriorate after the CMP process. However, by applying post‐treatment, the degraded characteristics can be restored to a similar state as that of a pre‐CMP MSQ film. Material and electrical analyses were performed to elucidate the detailed mechanisms of treatment on post‐CMP MSQ. treatment provides active hydrogen radicals to passivate the dangling bonds exposed in the MSQ after the CMP process. The hydrogen‐rich passivation layer is hydrophobic and effectively prevents further moisture uptake. Therefore, a degradation‐free CMP process can be achieved employing treatment. © 2000 The Electrochemical Society. All rights reserved.

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