AN INTERMEDIATE DONOR LEVEL IN N-TYPE GALLIUM ARSENIDE
- 1 May 1966
- journal article
- Published by Canadian Science Publishing in Canadian Journal of Physics
- Vol. 44 (5) , 941-948
- https://doi.org/10.1139/p66-078
Abstract
The activation energy and corresponding concentration of an unknown donor level in high-mobility n-type gallium arsenide has been determined. The energy and concentration have been found by fitting a suitable theoretical expression to results of Hall Effect measurements in the range 77–360 °K. The energy found is 0.158 eV below the conduction band.Keywords
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