1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE

4 August 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (16) , 1045-1046
https://doi.org/10.1049/el:19880711

Abstract

1.5 μm band GaInAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised.

Keywords

1.5 MICRON
GAINAS
INP
METALORGANIC VAPOUR PHASE EPITAXY
2.4 GBIT/S
LOW CHIRP SINGLE-LONGITUDINAL-MODE OPERATION
MOVPE
MULTIPLE-QUANTUM-WELL DISTRIBUTED FEEDBACK LASER DIODES
RZ MODULATION
GRATING SUBSTRATES