Cryogenic investigation of gate leakage and RF performances down to 50 K of 0.2 μm AlInAs/GaInAs/InP HEMTs

25 November 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (24) , 2152-2154
https://doi.org/10.1049/el:19931439

Abstract

0.2μm Al_0.48In_0.52As/Ga_0.47In_0.53As LMHEMT on InP with an undoped GaInAs layer to reduce gate leakage have been realised and their DC and RF properties have been investigated cryogenic temperatures. The cutoff maximum frequencies oscillation F_max up to 260 Hz are extrapolated at 50 K from the maximum unilateral gain (MUG) determined using S parameters measured up to 40 GHz. Evolution of gate leakage current and RF characteristics against gate and drain biases are presented between 50 and 300 K.

Keywords

GATE LEAKAGE
AL0.48IN0.52AS-GA0.47IN0.53AS-INP
ALINAS/GAINAS/INP HEMTS
50 TO 300 K
MICROWAVE DEVICE
0.2 MICRON
CRYOGENIC TEMPERATURES
RF PERFORMANCES
LMHEMT
0 TO 260 GHZ
DC PERFORMANCE
MAXIMUM UNILATERAL GAIN
CUTOFF FREQUENCY
UNDOPED GAINAS LAYER
INP
S-PARAMETERS

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