Grain‐Boundary Defect Chemistry of Acceptor‐Doped Titanates: Inversion Layer and Low‐Field Conduction
- 1 September 1997
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 80 (9) , 2301-2314
- https://doi.org/10.1111/j.1151-2916.1997.tb03121.x
Abstract
The electronic and ionic conduction across grain‐boundary (GB) space‐charge depletion layers in acceptor‐doped SrTiO3 ceramics have been investigated by admittance analysis in the time domain. The dependence on the acceptor concentration, the oxygen partial pressure during equilibration, and the temperature dependence of the GB conductivity are discussed and interpreted in terms of a defect‐chemistry model of the GB region using a numerical simulation technique.Keywords
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