0–90 GHz InAlAs/InGaAs/InP HEMT distributedbaseband amplifier IC
- 17 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (17) , 1430-1431
- https://doi.org/10.1049/el:19951032
Abstract
An InAlAs/InGaAs/InP HEMT distributed baseband amplifier IC that uses a new loss compensation technique for the drain artificial line is described. The amplifier IC has a gain of 10 dB with a 0–90 GHz bandwidth. This is the widest bandwidth among all reported baseband amplifier ICs to date.Keywords
This publication has 2 references indexed in Scilit:
- 5-100 GHz InP coplanar waveguide MMIC distributed amplifierIEEE Transactions on Microwave Theory and Techniques, 1990
- Attenuation compensation in distributed amplifier designIEEE Transactions on Microwave Theory and Techniques, 1989