Low-temperature impurity breakdown in semiconductors: An approach towards efficient device simulation
- 1 August 1996
- journal article
- review article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (8) , 1155-1164
- https://doi.org/10.1016/0038-1101(96)00009-3
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Spiking in an activator-inhibitor model for elements with S-shaped negative differential conductivityZeitschrift für Physik B Condensed Matter, 1994
- Complex spatiotemporal dynamics of current filaments in crossed electric and magnetic fieldsPhysical Review B, 1993
- Complex dynamics of current filaments in the low-temperature impurity breakdown regime of semiconductorsPhysical Review B, 1993
- Globally coupled dynamics of breathing current filaments in semiconductorsZeitschrift für Physik B Condensed Matter, 1992
- Nonlinear dynamics of breathing current filaments inn-GaAs andp-GeZeitschrift für Physik B Condensed Matter, 1990
- Fluctuations located at current filament boundaries in n-GaAsSolid State Communications, 1989
- Reconstruction of the spatial structure of current filaments in n-GaAs in a magnetic fieldApplied Physics Letters, 1989
- Spatially resolved observation of current filament dynamics in semiconductorsSolid State Communications, 1987
- Equal areas rules for filamentation in SNDC elementsSolid-State Electronics, 1986
- Current layers and filaments in a semiconductor model with an impact ionization induced instabilityZeitschrift für Physik B Condensed Matter, 1982