The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10[sup ?3] to 5 × 10[sup ?1] Torr Oxygen Pressure

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Abstract
A kinetic study was made of the oxidation of high‐purity silicon carbide using a dynamic‐type reaction system. Two types of oxidation behavior were found. Passive oxidation occurred for conditions where silica films were formed on the surface. Active oxidation occurred for conditions where volatile silicon monoxide was formed. The transition conditions between the two types of oxidation were studied as a function of oxygen pressure and temperature. The transition temperatures and pressures were related to thermochemical conditions for the reaction of silicon carbide with silica to form silicon monoxide and carbon monoxide.