A Graphene Field-Effect Device

Preprint

8 March 2007

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0703208

Abstract

In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.

Keywords

FIELD EFFECT DEVICE
GRAPHENE FIELD
PROCESS FLOW
MOBILITIES
MOSFETS
SILICON
CMOS

All Related Versions

Version 1, 2007-03-08, ArXiv
Published version: IEEE Electron Device Letters, 28 (4), 282.

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