Electrical and optical properties of MoSe2 films prepared by r.f. magnetron sputtering
- 1 February 1985
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 124 (1) , 75-83
- https://doi.org/10.1016/0040-6090(85)90031-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Morphological and compositional properties of MoSe2 films prepared by r.f. magnetron sputteringThin Solid Films, 1984
- Electrical resistivity and microstructures of sputtered CuxMo6S8 filmsThin Solid Films, 1983
- Moisture-resistant MoS2-based composite lubricant filmsThin Solid Films, 1983
- Friction properties of sputtered dichalcogenide layersTribology International, 1981
- Temperature dependence of the electrical conductivity and hall coefficient in 2H‐MoS2, MoSe2, WSe2, and MoTe2Physica Status Solidi (b), 1977
- The low-energy absorption edge in 2H-MoS2and 2H-MoSe2Philosophical Magazine, 1975
- The electrical properties and the magnitude of the indirect gap in the semiconducting transition metal dichalcogenide layer crystalsJournal of Physics C: Solid State Physics, 1975
- Derivation of optical constants from transmission measurements alone—applied to MoSe2Thin Solid Films, 1970
- Semiconducting Behavior of Substituted Tungsten Diselenide and Its AnaloguesJournal of the Electrochemical Society, 1964