Conductivity in boron-doped diamond
- 2 January 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (3) , 033201
- https://doi.org/10.1103/physrevb.63.033201
Abstract
The appearance of additional states of an impurity under high doping levels is discussed. On the basis of a Fermi level calculation, a model for the conductivity of heavily boron-doped diamond is proposed. This model allows one to reproduce the temperature dependence of the conductivity and of the Hall coefficient for different impurity concentrations. The temperature dependence of the conductivity was found to be connected with the coexistence of valence-band and hopping conductivities in a wide temperature range. The hopping conductivity takes place over the additional states of the boron impurity.Keywords
This publication has 14 references indexed in Scilit:
- Electronic Properties of Doped SemiconductorsPublished by Springer Nature ,1984
- Hopping conduction in semiconducting diamondPhysical Review B, 1978
- The nature of the acceptor centre in semiconducting diamondJournal of Physics C: Solid State Physics, 1971
- Impurity conduction in synthetic semiconducting diamondJournal of Physics C: Solid State Physics, 1970
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969
- Impurity Conduction in the Intermediate Concentration RegionPhysical Review B, 1965
- Optical Phonon Effects in the Infra-red Spectrum of Acceptor Centres in Semiconducting DiamondProceedings of the Physical Society, 1962
- The theory of impurity conductionAdvances in Physics, 1961
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960
- Electrical Properties of Germanium Semiconductors at Low TemperaturesPhysical Review B, 1955