In x Ga 1− x As-epitaxy with metalorganic adducts
- 1 September 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (18) , 728-729
- https://doi.org/10.1049/el:19830495
Abstract
Two metalorganic adducts (trimethylindium-trimethylarsine (CH3)3In-As(CH3)3 and trimethylgallium-trimethylarsine (CH3)3Ga-As(CH3)3) have been used for the epitaxial growth of InxGa1−xAs on InP, and GaAs, substrates at normal pressure. Epitaxial layers with net carrier concentrations of n = 2 × 1016 cm−3, μ300K = 6600 cm2/Vs (In0.53Ga0.47As/InP) and n′ = 1 × 1016 cm−3, μ′ = 3200 cm2/Vs (In0.2Ga0.8As/GaAs) have been grown.Keywords
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