The Use of Boron Doped Polysilicon in PMOS Devices

Publisher Website

1 January 1989

book chapter
Published by Springer Nature

p. 29-32
https://doi.org/10.1007/978-3-642-52314-4_4

Abstract

No abstract available

This publication has 2 references indexed in Scilit:

A MOBILITY MODEL FOR MOSFET DEVICE DIMULATION
Le Journal de Physique Colloques, 1988
Design tradeoffs between surface and buried-channel FET's
IEEE Transactions on Electron Devices, 1985