Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (8) , 1801-1816
- https://doi.org/10.1109/3.301645
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- 1.5 µm Semiconductor Wavelength Tunable Optical Filter Using a λ/4-Shifted Passive Waveguide Grating ResonatorJapanese Journal of Applied Physics, 1991
- Integrated interferometric injection laser: novel fast and broad-band tunable monolithic light sourceIEEE Journal of Quantum Electronics, 1991
- Two-channel optical filtering of 1 Gbit/s signal with DBR filterElectronics Letters, 1991
- Simple measurement of carrier induced refractive-index change in InGaAsP pin ridge waveguide structuresElectronics Letters, 1991
- A new method for the calculation of the emission spectrum of DFB and DBR lasersIEEE Journal of Quantum Electronics, 1991
- Long-Wavelength Semiconductor LasersPublished by Springer Nature ,1986
- InGaAsP/InP waveguide grating filters for λ=1.5 μmApplied Physics Letters, 1984
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Optical properties of In1−xGaxP1−yAsy, InP, GaAs, and GaP determined by ellipsometryJournal of Applied Physics, 1982
- Refractive index data from Ga
x
In
1−
x
As
y
P
1−
y
filmsElectronics Letters, 1981