Electrical transport properties of p-type Pb1−xCdxTe thin films

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Abstract
Hall coefficient and dc conductivity measurements have been made in the temperature range 77–500 K on thin exptaxial films of p‐type Pb1‐xCd xTe, grown by vacuum evaporation using a three‐temperature technique. It has been found that the principal band gap and the mobility ratio of electron to hole increases with the increase of x. Increase of x is found to increase Te vacancies in the films which act as donors. In the low‐temperature region, the ionised impurity scattering is found to be predominant, while the phonon scattering is found to limit the mobility of the charge carries at higher temperatures.

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