Alternative formulation of generalized Einstein relation for degenerate semiconductors

1 July 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 56 (7) , 1256-1257
https://doi.org/10.1109/proc.1968.6561

Abstract

This letter derives an alternative formulation of the Einstein relation for degenerate semiconductors. From this formulation a graph is constructed displaying the dependence of the diffusivity-mobility ratio against carrier concentration valid for any temperature and for any material whose density of quantum states varies, to a reasonable approximation, as the square root of energy.

Keywords

ELECTRONS
INTEGRAL EQUATIONS
SILICON
GERMANIUM
TEMPERATURE
MATHEMATICS
STOCHASTIC SYSTEMS
SEMICONDUCTOR MATERIALS
CHEMICALS
LABORATORIES