Transmissive-mode silicon field emission array photoemitter

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Abstract
The photosensitivity of thin silicon field‐emitter array structures has been investigated in transmission over the 0.4‐ to 1.1‐μm spectral region. Quantum yields of 45% at 0.90 μm and 0.5% at 1.06 μm have been measured at 90 °K. Image formation at wavelengths longer than 0.85 μm with a resolution approaching 10 line pairs/mm has been demonstrated with prototype 30‐mm‐diam target structures. It is also shown that large‐area avalanche multiplication of carriers may be used without significant image degradation.