Ion Implanted N-Type Contact for High-Purity Germanium Radiation Detectors
- 1 January 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 24 (1) , 161-164
- https://doi.org/10.1109/tns.1977.4328661
Abstract
Thin large-area n+ contacts on high-purity germanium detectors have been produced by implantation of 25 keV phosphorous ions. The contacts show leakage current of < 10-9 A up to fields of > 2000 V/cm. Unannealed lattice damage may still limit the maximum applied field, but proper surface treatment prior to implantation and subsequent annealing steps have resulted in a dramatic improvement in the applied field. Spectra are presented which demonstrate that the n+ window is thin and the spectrometer performance is excellent.Keywords
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