Mosfet and MOS Capacitor Responses to Ionizing Radiation
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1461-1466
- https://doi.org/10.1109/tns.1984.4333530
Abstract
The ionizing radiation responses of metal oxide semiconductor (MOS) field-effect transistors (FETs) and MOS capacitors are compared. It is shown that the radiation-induced threshold voltage shift correlates closely with the shift in the MOS capacitor inversion voltage. The radiation-induced interface-state density of the MOSFETs and MOS capacitors was determined by several techniques. It is shown that the presence of "slow" states can interfere with the interface-state measurements.Keywords
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