Resonances in the silicon L core level cross sections of fluoromethylsilane compounds characterized by photoabsorption spectroscopy and MS-Xα calculations
- 1 August 1990
- journal article
- Published by Elsevier in Chemical Physics
- Vol. 145 (1) , 131-152
- https://doi.org/10.1016/0301-0104(90)80124-g
Abstract
No abstract availableThis publication has 45 references indexed in Scilit:
- Si 2pand 2sresonant excitation and photoionization inPhysical Review A, 1988
- The high-resolution photoabsorption spectra of PH3, PF3, PCl3and PBr3in the XUV regionJournal of Physics B: Atomic and Molecular Physics, 1987
- Selective resonant photoionization processes near the Si 2pedge of tetramethylsilanePhysical Review Letters, 1986
- Electronic excitations in phosphorus-containing molecules. I. Inner shell electron energy loss spectra of PH3, P(CH3)3, PF3 and PCL3Journal of Electron Spectroscopy and Related Phenomena, 1985
- Determination of intramolecular bond lengths in gas phase molecules from K shell shape resonancesThe Journal of Chemical Physics, 1984
- Overlapping core to valence and core to Rydberg transitions and resonances in the XUV spectra of SiF4Journal of Physics B: Atomic and Molecular Physics, 1980
- Chemical Shifts of Auger Electron Lines and Electron Binding Energies in Free Molecules. Silicon CompoundsPhysica Scripta, 1980
- An ESCA Investigation of some Halogeno(methyl)-Silane and -Germane SeriesCanadian Journal of Chemistry, 1975
- Absorption by Some Molecular Gases in the Extreme UltravioletPhysical Review A, 1972
- Evidence of Effective Potential Barriers in the X-Ray Absorption Spectra of MoleculesThe Journal of Chemical Physics, 1972