Geometric factors in f.c.c. and b.c.c. metal-on-metal epitaxy Part II. Deposits of Ni, Cu, Au and Ag on (001) W

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Abstract
Deposits of Ni, Cu, Au and Ag formed by condensing metal vapour in U.H.V. onto (001) W, held at a temperature T g in the range 300 K < T g < 1200 K, always form epitaxial layers. However, while Au and Ag form (001) epitaxial layers of f.c.c. single crystals, (001)d‖(001)s with, say, [110]d‖[010]s, Ni and Cu occur in two orthogonal domains, each characterized by an exclusive set of fault (or twin) planes. Within a fault plane, atoms are hexagonally close-packed and, within a domain, fault planes are normal to either [1 10]s or [110]s and a close-packed direction in the planes is normal to the substrate. The lateral stacking of the fault planes may range from random at low values of T g to that of, say, (11 1) planes in heavily faulted and/or twinned (110) epitaxed f.c.c. material, or of basal planes in (110) epitaxed h.c.p. material at high values of T g . The results are readily explained on the basis of a growth model developed for deposits of Ni and Cu on (001) Ag. The labels d and s refer to deposit and substrate, respectively.

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