Diffusion Control in Silicon by Carrier Gas Composition

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Abstract
A single heating process is described for producing controlled p‐n and n‐p‐n diffused structures in silicon by changing the carrier gas composition during diffusion. The process is shown to depend on large changes in the rate of evaporation from a source at a given temperature in carrier gases of different composition. The weight loss from a source at a given temperature is quite large in reducing gases, extremely small in neutral gases, and essentially zero in oxidizing gases. The weight loss from a source in reducing gases also decreases with increasing concentrations of water vapor in the carrier gas. The weight loss from a source at a given temperature is relatively large in all of these carrier gases.

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