Chemistry of arsenic incorporation during GaAs/GaAs(100) molecular beam epitaxy probed by simultaneous laser flux monitoring and reflection high-energy electron diffraction
- 1 July 1996
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 14 (4) , 2742-2752
- https://doi.org/10.1116/1.589013
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