Growth and properties of lithium-doped ZnSe films by atmospheric pressure metalorganic vapor phase epitaxy
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 697-702
- https://doi.org/10.1016/0022-0248(88)90606-9
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping techniqueJournal of Crystal Growth, 1988
- The dependence on growth temperature of the photoluminescence properties of nitrogen-doped ZnSe grown by MOCVDJournal of Crystal Growth, 1988
- Effect of elastic strain on the energy band gap in heteroepitaxially grown ZnSeJournal of Applied Physics, 1987
- p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressureJournal of Applied Physics, 1986
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Are impurities the cause of ’’self’’-compensation in large-band-gap semiconductors?Journal of Applied Physics, 1980
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964