Influence of Se atoms on the properties of amorphous Ge
- 31 March 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 25 (11) , 933-936
- https://doi.org/10.1016/0038-1098(78)90305-8
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Electrical and Optical Properties of GexSe1-xAmorphous Thin FilmsJapanese Journal of Applied Physics, 1976
- Use of hydrogenation in structural and electronic studies of gap states in amorphous germaniumPhysical Review B, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Bonding Bands, Lone-Pair Bands, and Impurity States in Chalcogenide SemiconductorsPhysical Review Letters, 1972
- Conduction in non-crystalline materialsPhilosophical Magazine, 1969