A multiple p-n-junction structure obtained from as-grown Czochralski silicon crystals by heat treatment: Application to solar cells
- 1 July 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (7) , 1306-1309
- https://doi.org/10.1109/t-ed.1980.20029
Abstract
Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxgen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450°C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.Keywords
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