Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
- 1 April 2002
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 389-393, 215-218
- https://doi.org/10.4028/www.scientific.net/msf.389-393.215
Abstract
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