Microwave performance of pulse-doped-heterostructure GaInAs MESFETs

21 January 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (2) , 93-94
https://doi.org/10.1049/el:19880061

Abstract

A pulse-doped-heterostructure GaInAs MESFET having a 0.7 μm gate length with a transconductance of 270 mS/mm has been fabricated. Maximum stable gains of 14 dB at 26.5 GHZ, which extrapolates to an f_max of over 100 GHz, were measured.

Keywords

III-V SEMICONDUCTORS
0.5 TO 100 GHZ
14 DB
26.5 GHZ
GAINAS-ALINAS
MICROWAVE DEVICES
0.7 MICRON
SUBMICRON GATE LENGTH
STABLE GAINS
SHF
MESFET
270 MS
TRANSCONDUCTANCE
EHF
PULSE-DOPED-HETEROSTRUCTURE