Near-field and far-field patterns of phase-locked semiconductor laser arrays
- 15 March 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (6) , 495-497
- https://doi.org/10.1063/1.93980
Abstract
A gain-guided phase-locked semiconductor laser array has been observed to emit a single narrow lobed far-field radiation pattern up to 70 mW, at which power level it exhibits a distinct change. We show that this effect results from a new phase-locked mode attaining threshold; the original mode remains phase locked above this power level.Keywords
This publication has 6 references indexed in Scilit:
- Focusing of a 7700-Å high power phased array semiconductor laserApplied Physics Letters, 1982
- Lateral beam collimation of a phased array semiconductor laserApplied Physics Letters, 1982
- Experimental and analytic studies of coupled multiple stripe diode lasersIEEE Journal of Quantum Electronics, 1979
- Symmetrical and asymmetrical waveguiding in very narrow conducting stripe lasersIEEE Journal of Quantum Electronics, 1979
- Beam scanning with twin-stripe injection lasersApplied Physics Letters, 1978
- Electromagnetic Modes of Anisotropic Dielectric Waveguides at p-n JunctionsJournal of Applied Physics, 1967