Photoluminescence study of excess carrier spillover in 1.3 μm wavelength strained multi-quantum-well InGaAsP/InP laser structures
- 13 March 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (11) , 1307-1309
- https://doi.org/10.1063/1.113224
Abstract
Photoluminescence of 1.3 μm wavelength strained multiple quantum well InGaAsP/InP laser structures has been used to understand the excess carrier redistribution between the quantum well and waveguide regions at a high level of excitation. A model is developed to describe the experimental results. The model suggests that space charge barriers play a significant role in the electron confinement in quantum wells at the high excitation range typical of laser diode operation.Keywords
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