Hydrogen passivation of donors and acceptors in SiC
- 28 August 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (9) , 1253-1255
- https://doi.org/10.1063/1.114388
Abstract
The effect of hydrogen on donors (N) and acceptors (Al, B) in 6H-SiC crystals has been evidenced by electron spin resonance and transport measurements. Typical passivation (i.e., complexing with H) levels of 75% have been obtained by annealing in a H2 atmosphere, and a corresponding decrease in free-carrier density has been observed.Keywords
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