A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications

1 October 2006

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10889299,p. 1-4
https://doi.org/10.1109/bipol.2006.311157

Abstract

The paper presents a 0.13 mum SiGe BiCMOS technology for millimeter wave applications. This technology features a high performance HBT (f_T = 300 GHz /f_max = 330 GHz) along with various newly developed millimeter wave features, such varactor, Schottky and p-i-n diodes and other back end of line passives

Keywords

MILLIMETER WAVE TECHNOLOGY
BICMOS INTEGRATED CIRCUITS
SILICON GERMANIUM
GERMANIUM SILICON ALLOYS
HETEROJUNCTION BIPOLAR TRANSISTORS
MILLIMETER WAVE TRANSISTORS
P-I-N DIODES
ISOLATION TECHNOLOGY
INTEGRATED CIRCUIT TECHNOLOGY
MILLIMETER WAVE INTEGRATED CIRCUITS