Electron saturation velocity in Ga 0.5 Inp 0.5 P measured in a GaInP/GaAs/GaInP double-heterojunction bipolar transistor
- 14 October 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (21) , 1885-1886
- https://doi.org/10.1049/el:19931255
Abstract
The first (not necessarily typical) performance measurements on Ga0.5In0.5P/GaAs/Ga0.5In0.5P double-heterojunction bipolar transistors are reported. The measured cutoff frequency and maximum oscillation frequency are 25 and 35GHz, respectively. From various measurements of fT under various bias conditions, the value of the electron saturation velocity in GaInP is determined to be 4.4 × 106cm/s.Keywords
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