High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz
- 6 December 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (25-26) , 1061-1062
- https://doi.org/10.1049/el:19840725
Abstract
High-power and high-efficiency InP Gunn diodes which were made from wafers grown by LP-MOCVD have been developed in the millimetre-wave range. Average power levels in excess of 50 mW were obtained at 94 GHz with an efficiency of 3%, while an optimised structure operating at 75 mW has been obtained with an efficiency of 2.4%.Keywords
This publication has 1 reference indexed in Scilit:
- High Efficiency InP Millimeter-Wave Oscillators and AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984