Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy
- 1 March 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 85 (5) , 2591-2594
- https://doi.org/10.1063/1.369625
Abstract
We systematically investigated the growth of self-organizedGaSb islands on a GaAs surface by molecular beam epitaxy technique. The lattice mismatch between GaAs and GaSb is 7.8%. At low growth temperature, only one kind of island can be observed, which is thought to be issued from the nucleation cluster. When the growth temperature is increased, another kind of island appears due to coalescence. When the growth temperature is above 535 ° C , only the latter can be observed. From the temperature dependence of island density and size, surface diffusionenergy and activation energy of GaSb on a GaAs surface have been determined to be 0.85 and 2.15 eV, respectively.This publication has 20 references indexed in Scilit:
- Self-Organization in Growth of Quantum Dot SuperlatticesPhysical Review Letters, 1996
- Evidence of two-species nucleation of InAs islands on (100) and (111)B GaAs substratesApplied Physics Letters, 1996
- Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAsPhysical Review Letters, 1996
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Radiative recombination in type-II GaSb/GaAs quantum dotsApplied Physics Letters, 1995
- Strain-induced quantum dots by self-organized stressorsApplied Physics Letters, 1995
- Electron-Hole Transitions between States with Nonzero Angular Momenta in the Magnetoluminescence of Quantum DotsPhysical Review Letters, 1995
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of As on GaAs(100)Physical Review B, 1992
- Effect of strain on surface morphology in highly strained InGaAs filmsPhysical Review Letters, 1991