Photoluminescence of the two-dimensional hole gas inp-type δ-doped Si layers

15 April 1996

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 53 (15) , 9587-9590
https://doi.org/10.1103/physrevb.53.9587

Abstract

The radiative recombination processes related to the boron-δ-doping of Si layers are studied by means of photoluminescence (PL) spectroscopy. New broad asymmetric PL bands below the band edge excitonic emissions are shown to be characteristic for p-type modulation doping. By studying the dependence of the PL properties on structure parameters, such as doping level and growth temperature, and on the experimental conditions the mechanisms of the radiative recombination are analyzed. The PL revealed is argued to be related to the recombination between the two-dimensional hole gas confined in the doping-induced notch potential and photocreated electrons. © 1996 The American Physical Society.

Keywords

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