Physical and Chemical Sputtering at Very Low Ion Energy: the Importance of the Sputtering Threshold
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Sputtering of chemisorbed nitrogen from single-crystal planes of tungsten and molybdenumPhysical Review B, 1987
- A simple formula for low-energy sputtering yieldsApplied Physics A, 1985
- Mechanism of Dry Etching of Silicon Dioxide: A Case of Direct Reactive Ion EtchingJournal of the Electrochemical Society, 1985
- Some useful yield estimates for ion beam sputtering and ion plating at low bombarding energiesJournal of Vacuum Science & Technology B, 1984
- A universal relation for the sputtering yield of monatomic solids at normal ion incidenceNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Reactive ion beam etching: Dissociation of molecular ions upon impactJournal of Vacuum Science & Technology B, 1984
- Sputtering by ion bombardment theoretical conceptsPublished by Springer Nature ,1981
- A semiempirical formula for the energy dependence of the sputtering yieldRadiation Effects, 1981
- Calculations of nuclear stopping, ranges, and straggling in the low-energy regionPhysical Review B, 1977
- Sputtering Yields of Metals for Ar+ and Ne+ Ions with Energies from 50 to 600 evJournal of Applied Physics, 1961