Etch Patterns and the Mechanism of Etching of Germanium by Iodine Vapor
- 1 March 1963
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 2 (3) , 143-150
- https://doi.org/10.1143/jjap.2.143
Abstract
In the reaction between iodine vapor and Ge, the latter is etched away mainly as GeI2 at temperature between 450° and 550°C. The rate of this reaction is not determined by the supply of positive holes. The relative reactivities of three crystallographic surfaces are in the order: {110}>{111}≥{100}, which is the same order as the densities of surface atoms. Thus {100} and {111} planes of slower etching rate are always revealed and pyramidal pits of two-, three- and four-fold symmetries are developed on the surfaces {110}, {111} and {100}, respectively. A triangular pit formed on the (111) surface is regarded as a positive pit and it does not always correspond to a dislocation.Keywords
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