Cyclotron masses in n-GaAs/Ga 1−xAl xAs heterojunctions
- 30 June 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 62 (12) , 841-844
- https://doi.org/10.1016/0038-1098(87)90833-7
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Electron states in GaAs/Ga1−xAlxAs heterostructures: Subband Landau-levelsSuperlattices and Microstructures, 1986
- Electron states in GaAs/Ga1−xAlxAs heterostructures: Nonparabolicity and spin-splittingSuperlattices and Microstructures, 1986
- Theory of the cyclotron resonance spectrum of a polaron in two dimensionsPhysical Review B, 1986
- k→⋅p→theory, effective-mass approach, and spin splitting for two-dimensional electrons in GaAs-GaAlAs heterostructuresPhysical Review B, 1985
- Landau-Level Broadening in GaAs/AlGaAs HeterojunctionsJournal of the Physics Society Japan, 1985
- Analysis of polaron effects in the cyclotron resonance ofn-GaAs and AlGaAs-GaAs heterojunctionsPhysical Review B, 1985
- Resonant polarons in a GaAs-GaAlAs heterostructureSolid State Communications, 1985
- Cyclotron resonance studies of screening and polaron effects in GaAs-AlGaAs heterostructuresSurface Science, 1984
- Calculation of the cyclotron resonance linewidth in GaAsAlGaAs heterostructuresSolid State Communications, 1983
- Observation of oscillatory linewidth in the cyclotron resonance of GaAsAlxGa1−xAs heterostructuresSolid State Communications, 1983