Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinityApplied Physics Letters, 1999
- Limited influence of grain boundary defects in hot-wire CVD polysilicon films on solar cell performanceJournal of Non-Crystalline Solids, 1998
- Observation of Improved Structural Ordering in Low H Content, Hot wire Deposited a-Si:HMRS Proceedings, 1997
- New Hydrogen Distribution ina-Si:H: An NMR StudyPhysical Review Letters, 1996
- Hydrogen dilution effects on a-Si:H and a-SiGe:H materials properties and solar cell performanceJournal of Non-Crystalline Solids, 1996
- Infrared absorption strength and hydrogen content of hydrogenated amorphous siliconPhysical Review B, 1992
- Hydrogen Incorporation in Amorphous Silicon and Processes of Its ReleasePublished by Springer Nature ,1985
- Reinterpretation of the silicon-hydrogen stretch frequencies in amorphous siliconSolid State Communications, 1983
- On light-induced effect in amorphous hydrogenated siliconJournal of Applied Physics, 1981
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977