Flip-chip mounted GaAs power f.e.t. with improved performance in X- to Ku-band
- 19 July 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (15) , 461-462
- https://doi.org/10.1049/el:19790331
Abstract
A GaAs power m.e.s.f.e.t. with a new structure has been developed, which allows extremely reduced source inductances and minimised thermal resistance. In the structure, the chip, with metal posts plated on the source, drain and gate pads, is connected directly to the package with no wire. The best results obtained were 2.5 W at 15 GHz and 4.1 W at 12 GHz.Keywords
This publication has 1 reference indexed in Scilit:
- 15-Watt Internally Matched GaAs FETs and 20-Watt Amplifier Operating at 6 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005